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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1108 DESCRIPTION *With TO-220C package *High breakdown voltage :VCEO=100V *High current :4A APPLICATIONS *For power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION * Absolute maximum ratings(Tc=25) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 100 100 5 4 40 150 -55~150 UNIT V V V A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT COB PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown votage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=25mA; IB=0 IE=1mA; IC=0 IC=3A;IB=0.3 A IC=3A;IB=0.3 A VCB=100V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=4V IC=0.5A ; VCE=12V IE=0; VCB=10V;f=1MHz 25 100 10 MIN 100 5 TYP. 2SC1108 MAX UNIT V V 1.5 2.0 0.1 0.1 320 V V mA mA MHz pF 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1108 Fig.2 Outline dimensions (unindicated tolerance:0.10 mm) 3 |
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